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HiPerFAST TM IGBT with Diode
Preliminary Data Sheet
IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ)
= 600 V = 75 A = 2.5 V = 48 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C
Maximum Ratings 600 600 20 30 75 50 48 300 ICM = 100 480 -55 ... +150 150 -55 ... +150 V V V V A A A A A
TO-264 AA (IXGK)
G C (TAB) E
PLUS247 (IXGX)
G (TAB) E
C
G = Gate E = Emitter
C = Collector Tab = Collector
W C C C
Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
1.13/10 Nm/lb.in. 10 6 300 g g C
Features * Very high frequency IGBT and anti-parallel FRED in one package * Square RBSOA * High current handling capability * MOS Gate turn-on for drive simplicity * Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications * Switch-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC choppers * AC motor speed control * DC servo and robot drives
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 25C TJ = 125C 5.0 650 5 100 TJ = 25C TJ = 125C 2.1 1.8 2.5 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 40 A, VGE = 15 V Note 1
Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw
(c) 2004 IXYS All rights reserved
DS99148A(05/04)
IXGK 50N60C2D1 IXGX 50N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 51 3700 290 50 138 25 40 18 Inductive load, TJ = 25C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0 25 115 150 48 0.38 18 25 1.4 170 60 0.74 0.15 S pF pF pF nC nC nC
Dim. Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max.
TO-264 AA Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 40 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
ns ns ns ns 0.7 mJ ns ns mJ ns ns mJ 0.31 K/W K/W
Inductive load, TJ = 125C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
PLUS247 Outline
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C 2.1 1.4 8.3 35 V A ns 0.65 K/W
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t 300 s, duty cycle 2 %
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGK 50N60C2D1 IXGX 50N60C2D1
Fig. 1. Output Characte ristics @ 25 Deg. C
80 70 60 VGE = 15V 13V 11V 9V 320 280 240 VGE = 15V 13V 11V
Fig. 2. Extended Output Characte ristics @ 25 de g. C
7V
I C - Amperes
I C - Amperes
50 40 30 20 10 0 0.5 1 1.5 2 2.5 3 3.5 4 5V 6V
200 160 120
9V
7V 80 40 0 0 1 2 3 5V 4 5 6 7 8 9 10
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
80 70 60 VGE = 15V 13V 11V 9V 7V 1.2 1.1
V C E - Volts
Fig. 4. De pende nce of V CE(sat) on Tem perature
V GE = 15V
VC E ( s a t )- Normalized
1.0 0.9 0.8 0.7 0.6 I C = 40A
I C - Amperes
50 40 30 20 10 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 6V
I C = 80A
I C = 20A
0.5 25 50 75 100 125 150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
4.8 4.5 4.2 TJ = 25C 200 180 160
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
VC E - Volts
3.9 3.6 3.3 3 2.7 2.4 5 6 7 8
I C - Amperes
I C = 80A 40A 20A
140 120 100 80 60 40 20 0 TJ = 125C 25C
9
10 11 12
13 14 15 16 17
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
V G E - Volts
(c) 2004 IXYS All rights reserved
V G E - Volts
IXGK 50N60C2D1 IXGX 50N60C2D1
Fig. 7. Transconductance
70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 TJ = 25C 125C 3 2.7 2.4 TJ = 125C VGE = 15V VCE = 480V I C = 80A
Fig. 8. Dependence of Turn-Off Energy on RG
E o f f - milliJoules
g f s - Siemens
2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 2 4 6 8 10 12 14 16 18 I C = 20A I C = 40A
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic
2.2 2 1.8 R G = 2 R G = 10 - - - VGE = 15V VCE = 480V 2.4 2.1 1.8
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
R G = 2 R G = 10 - - - VGE = 15V VCE = 480V I C = 80A
E o f f - MilliJoules
1.4 1.2 1 0.8 0.6 0.4 0.2 0 20 30 40 50 60 70 80 TJ = 25C TJ = 125C
E o f f - milliJoules
1.6
1.5 1.2 0.9 0.6 0.3 0 25 35 45 55 65 75 85
I C = 40A
I C = 20A 95 105 115 125
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
450 200
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic
180 160 140 120 100 80 60 40 TJ = 25C
Switching Time - nanoseconds
350 300 250 200
TJ = 125C VGE = 15V VCE = 480V
Switching Time - nanoseconds
400
td(off) tfi - - - - - -
td(off) tfi - - - - - R G = 2 VGE = 15V VCE = 480V
TJ = 125C
I C = 40A 150 100 50 2 4 6 8 10 12 14 I C = 80A
I C = 20A
16
18
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
20
30
40
50
60
70
80
I C - Amperes
IXGK 50N60C2D1 IXGX 50N60C2D1
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature
200 110 180 160 140 120 100 80 60 40 20 25 35 45 I C = 20A 55 65 75 85 95 105 115 125 I C = 40A
Fig. 14. Reverse-Bias Safe Operating Area
100
Switching Time - nanoseconds
td(off) tfi - - - - - R G = 2 VGE = 15V VCE = 480V
I C = 20A
90 80
I C - Amperes
70 60 50 40 30 20 10 0 TJ = 125 C R G = 10 dV/dT < 10V/ns
I C = 80A
TJ - Degrees Centigrade
100
200
300
400
CE
500
600
V
- Volts
Fig. 15. Gate Charge
16 14 12 10 8 6 4 2 0 0 30 60 90 120 150 10 0 5 VCE = 300V I C = 40A I G = 10mA 10000
Fig. 16. Capacitance
f = 1 MHz
Capacitance - picoFarrads
C ies 1000
VG E - Volts
100
C oes
C res
10
15
Q G - nanoCoulombs
V C E - Volts
20
25
30
35
40
Fig. 16. Maxim um Transient The rm al Resistance
0.35 0.30
R ( t h ) J C - C / W
0.25 0.20 0.15 0.10 0.05 0.00 1 10
Pulse Width - milliseconds
100
1000
(c) 2004 IXYS All rights reserved
IXGK 50N60C2D1 IXGX 50N60C2D1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 19. Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
tfr
1.2
IRM
100 0.5
IF=120A IF= 60A IF= 30A
VFR
0.8
10
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 20. Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385
Note: Fig. 2 through Fig. 6 show typical values
0.001
0.0001 0.00001
DSEP 60-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.

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